BSD235N H6327
- Description：
- MOSFET N-CH DUAL 20V SOT363
- Manufacturer：
- Infineon Technologies
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Product Information
- Category
- FETs - Arrays
- Packaging
- Tape & Reel (TR)
- Series
- OptiMOS™
- FET Type
- 2 N-Channel (Dual)
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 950mA
- Rds On (Max) @ Id, Vgs
- 350 mOhm @ 950mA, 4.5V
- Vgs(th) (Max) @ Id
- 1.2V @ 1.6µA
- Gate Charge (Qg) @ Vgs
- 0.32nC @ 4.5V
- Input Capacitance (Ciss) @ Vds
- 63pF @ 10V
- Power - Max
- 500mW
- Mounting Type
- Surface Mount
- Package / Case
- 6-VSSOP, SC-88, SOT-363
- Supplier Device Package
- PG-SOT363-6
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