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2N7002ET1G
2N7002ET1G
Description:
MOSFET N-CH 60V 260MA SOT-23
Manufacturer:
ON Semiconductor
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2N7002ET1G
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2N7002ET1G
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Product Information
Category
FETs - Single
Packaging
Cut Tape (CT)
Series
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
260mA (Ta)
Rds On (Max) @ Id, Vgs
2.5 Ohm @ 240mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) @ Vgs
0.81nC @ 5V
Input Capacitance (Ciss) @ Vds
26.7pF @ 25V
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3 (TO-236)
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