NTMD6601NR2G
- Description：
- MOSFET N-CH 80V 1.1A 8SOIC
- Manufacturer：
- ON Semiconductor
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Product Information
- Category
- FETs - Arrays
- Packaging
- Tape & Reel (TR)
- Series
- -
- FET Type
- 2 N-Channel (Dual)
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 80V
- Current - Continuous Drain (Id) @ 25°C
- 1.1A
- Rds On (Max) @ Id, Vgs
- 215 mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Gate Charge (Qg) @ Vgs
- 15nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 400pF @ 25V
- Power - Max
- 600mW
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package
- 8-SOIC N
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