SSM6J505NU,LF
- Description：
- MOSFET P CH 12V 12A UDFN6B
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- MOSFET P-Channel, Metal Oxide
- FET Feature
- Logic Level Gate, 1.2V Drive
- Drain to Source Voltage (Vdss)
- 12V
- Current - Continuous Drain (Id) @ 25°C
- 12A (Ta)
- Rds On (Max) @ Id, Vgs
- 12 mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id
- 1V @ 1mA
- Gate Charge (Qg) @ Vgs
- 37.6nC @ 4.5V
- Input Capacitance (Ciss) @ Vds
- 2700pF @ 10V
- Power - Max
- 1.25W
- Mounting Type
- Surface Mount
- Package / Case
- 6-WDFN Exposed Pad
- Supplier Device Package
- 6-uDFN (2x2)
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