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SI2304DS,215

Description:
MOSFET N-CH 30V 1.7A SOT23
Manufacturer:
NXP Semiconductors
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SI2304DS,215

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
1.7A (Ta)
Rds On (Max) @ Id, Vgs
117 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) @ Vgs
4.6nC @ 10V
Input Capacitance (Ciss) @ Vds
195pF @ 10V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
SOT-23-3

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