SSM6J503NU,LF
- Description：
- MOSFET P CH 20V 6A 2-2AA1A
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- MOSFET P-Channel, Metal Oxide
- FET Feature
- Logic Level Gate, 1.5V Drive
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 6A (Ta)
- Rds On (Max) @ Id, Vgs
- 32.4 mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id
- 1V @ 1mA
- Gate Charge (Qg) @ Vgs
- 12.8nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 840pF @ 10V
- Power - Max
- 1W
- Mounting Type
- Surface Mount
- Package / Case
- 6-WDFN Exposed Pad
- Supplier Device Package
- 6-uDFN (2x2)
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