PMF280UN,115
- Description：
- MOSFET N-CH 20V 1.02A SOT323
- Manufacturer：
- NXP Semiconductors
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- TrenchMOS™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 1.02A
- Rds On (Max) @ Id, Vgs
- 340 mOhm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Gate Charge (Qg) @ Vgs
- 0.89nC @ 4.5V
- Input Capacitance (Ciss) @ Vds
- 45pF @ 20V
- Power - Max
- 560mW
- Mounting Type
- Surface Mount
- Package / Case
- SC-70, SOT-323
- Supplier Device Package
- SOT-323
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