SSM6J212FE,LF
- Description：
- MOSFET P CH 20A 4A ES6
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- MOSFET P-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 4A (Ta)
- Rds On (Max) @ Id, Vgs
- 40.7 mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id
- 1V @ 1mA
- Gate Charge (Qg) @ Vgs
- 14.1nC @ 4.5V
- Input Capacitance (Ciss) @ Vds
- 970pF @ 10V
- Power - Max
- 500mW
- Mounting Type
- Surface Mount
- Package / Case
- SOT-563, SOT-666
- Supplier Device Package
- ES6
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