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BSS306N H6327

Description:
MOSFET N-CH 30V 2.3A SOT23
Manufacturer:
Infineon Technologies
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BSS306N H6327

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
OptiMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
2.3A (Ta)
Rds On (Max) @ Id, Vgs
57 mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id
2V @ 11µA
Gate Charge (Qg) @ Vgs
1.5nC @ 5V
Input Capacitance (Ciss) @ Vds
275pF @ 15V
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
PG-SOT23-3

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