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SSM3J35MFV(TL3,T)

Description:
MOSF P CH 20V 100MA VESM
Manufacturer:
Toshiba Semiconductor and Storage
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SSM3J35MFV(TL3,T)

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
-
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Logic Level Gate, 1.2V Drive
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
100mA (Ta)
Rds On (Max) @ Id, Vgs
8 Ohm @ 50mA, 4V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) @ Vgs
-
Input Capacitance (Ciss) @ Vds
12.2pF @ 3V
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SOT-723
Supplier Device Package
VESM

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