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IPT020N10N3ATMA1

Description:
MOSFET N-CH 100V 300A 8HSOF
Manufacturer:
Infineon Technologies
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IPT020N10N3ATMA1

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
OptiMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
300A (Tc)
Rds On (Max) @ Id, Vgs
2 mOhm @ 150A, 10V
Vgs(th) (Max) @ Id
3.5V @ 272µA
Gate Charge (Qg) @ Vgs
156nC @ 10V
Input Capacitance (Ciss) @ Vds
11200pF @ 50V
Power - Max
375W
Mounting Type
Surface Mount
Package / Case
8-PowerDFN
Supplier Device Package
PG-HSOF-8-1

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