SI5511DC-T1-GE3
- Description：
- MOSFET N/P-CH 30V 1206-8
- Manufacturer：
- Vishay Siliconix
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Product Information
- Category
- FETs - Arrays
- Packaging
- Tape & Reel (TR)
- Series
- TrenchFET®
- FET Type
- N and P-Channel
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 4A, 3.6A
- Rds On (Max) @ Id, Vgs
- 55 mOhm @ 4.8A, 4.5V
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Gate Charge (Qg) @ Vgs
- 7.1nC @ 5V
- Input Capacitance (Ciss) @ Vds
- 435pF @ 15V
- Power - Max
- 3.1W, 2.6W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SMD, Flat Lead
- Supplier Device Package
- 1206-8 ChipFET™
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