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SCT2280KEC
SCT2280KEC
Description:
MOSFET N-CH 1200V 14A TO-247
Manufacturer:
Rohm Semiconductor
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SCT2280KEC
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SCT2280KEC
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Product Information
Category
FETs - Single
Packaging
Tube
Series
-
FET Type
SiCFET N-Channel, Silicon Carbide
FET Feature
Standard
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
14A (Tc)
Rds On (Max) @ Id, Vgs
364 mOhm @ 4A, 18V
Vgs(th) (Max) @ Id
4V @ 1.4mA
Gate Charge (Qg) @ Vgs
36nC @ 18V
Input Capacitance (Ciss) @ Vds
667pF @ 800V
Power - Max
108W
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247
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