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IPP65R190CFD

Description:
MOSFET N-CH 650V 17.5A TO220
Manufacturer:
Infineon Technologies
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IPP65R190CFD

Product Information

Category
FETs - Single
Packaging
Tube
Series
CoolMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
650V
Current - Continuous Drain (Id) @ 25°C
17.5A (Tc)
Rds On (Max) @ Id, Vgs
190 mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id
4.5V @ 730µA
Gate Charge (Qg) @ Vgs
68nC @ 10V
Input Capacitance (Ciss) @ Vds
1850pF @ 100V
Power - Max
151W
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3

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