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IPP60R299CP

Description:
MOSFET N-CH 650V 11A TO-220
Manufacturer:
Infineon Technologies
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IPP60R299CP

Product Information

Category
FETs - Single
Packaging
Tube
Series
CoolMOS™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
650V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Rds On (Max) @ Id, Vgs
299 mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id
3.5V @ 440µA
Gate Charge (Qg) @ Vgs
29nC @ 10V
Input Capacitance (Ciss) @ Vds
1100pF @ 100V
Power - Max
96W
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3

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