DMN5L06DW-7
- Description：
- MOSFET N-CHAN DUAL 200MW SOT-363
- Manufacturer：
- Diodes Incorporated
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Product Information
- Category
- FETs - Arrays
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- 2 N-Channel (Dual)
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 50V
- Current - Continuous Drain (Id) @ 25°C
- 280mA
- Rds On (Max) @ Id, Vgs
- 3 Ohm @ 200mA, 2.7V
- Vgs(th) (Max) @ Id
- 1.2V @ 250µA
- Gate Charge (Qg) @ Vgs
- -
- Input Capacitance (Ciss) @ Vds
- 50pF @ 25V
- Power - Max
- 200mW
- Mounting Type
- Surface Mount
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Supplier Device Package
- SOT-363
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