PMWD19UN,518
- Description：
- MOSFET N-CH TRENCH DL 30V 8TSSOP
- Manufacturer：
- NXP Semiconductors
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Product Information
- Category
- FETs - Arrays
- Packaging
- Cut Tape (CT)
- Series
- TrenchMOS™
- FET Type
- 2 N-Channel (Dual)
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 5.6A
- Rds On (Max) @ Id, Vgs
- 23 mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id
- 700mV @ 1mA
- Gate Charge (Qg) @ Vgs
- 28nC @ 5V
- Input Capacitance (Ciss) @ Vds
- 1478pF @ 10V
- Power - Max
- 2.3W
- Mounting Type
- Surface Mount
- Package / Case
- 8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package
- 8-TSSOP
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