IRF8915
- Description：
- MOSFET 2N-CH 20V 8.9A 8-SOIC
- Manufacturer：
- International Rectifier
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Product Information
- Category
- FETs - Arrays
- Packaging
- Tube
- Series
- HEXFET®
- FET Type
- 2 N-Channel (Dual)
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 8.9A
- Rds On (Max) @ Id, Vgs
- 18.3 mOhm @ 8.9A, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Gate Charge (Qg) @ Vgs
- 7.4nC @ 4.5V
- Input Capacitance (Ciss) @ Vds
- 540pF @ 10V
- Power - Max
- 2W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package
- 8-SO
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