IRF9952
- Description：
- MOSFET N+P 30V 2.3A 8-SOIC
- Manufacturer：
- International Rectifier
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Product Information
- Category
- FETs - Arrays
- Packaging
- Tube
- Series
- HEXFET®
- FET Type
- N and P-Channel
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 3.5A, 2.3A
- Rds On (Max) @ Id, Vgs
- 100 mOhm @ 2.2A, 10V
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Gate Charge (Qg) @ Vgs
- 14nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 190pF @ 15V
- Power - Max
- 2W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package
- 8-SO
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