SIE808DF-T1-E3
- Description：
- MOSFET N-CH 20V 60A 10-POLARPAK
- Manufacturer：
- Vishay Siliconix
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- TrenchFET®
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 60A (Tc)
- Rds On (Max) @ Id, Vgs
- 1.6 Ohm @ 25A, 10V
- Vgs(th) (Max) @ Id
- 3V @ 250µA
- Gate Charge (Qg) @ Vgs
- 155nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 8800pF @ 10V
- Power - Max
- 125W
- Mounting Type
- Surface Mount
- Package / Case
- 10-PolarPAK® (L)
- Supplier Device Package
- 10-PolarPAK® (L)
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