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IRFD010PBF

Description:
MOSFET N-CH 50V 1.7A 4-DIP
Manufacturer:
Vishay Siliconix
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IRFD010PBF

Product Information

Category
FETs - Single
Packaging
Tube
Series
HEXFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
50V
Current - Continuous Drain (Id) @ 25°C
1.7A (Tc)
Rds On (Max) @ Id, Vgs
200 mOhm @ 860mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) @ Vgs
13nC @ 10V
Input Capacitance (Ciss) @ Vds
250pF @ 25V
Power - Max
1W
Mounting Type
Through Hole
Package / Case
4-DIP (0.300", 7.62mm)
Supplier Device Package
4-DIP, Hexdip, HVMDIP

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