SI7450DP-T1-E3
- Description：
- MOSFET N-CH 200V 3.2A PPAK 8SOIC
- Manufacturer：
- Vishay Siliconix
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- TrenchFET®
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 200V
- Current - Continuous Drain (Id) @ 25°C
- 3.2A (Ta)
- Rds On (Max) @ Id, Vgs
- 80 mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id
- 4.5V @ 250µA
- Gate Charge (Qg) @ Vgs
- 42nC @ 10V
- Input Capacitance (Ciss) @ Vds
- -
- Power - Max
- 1.9W
- Mounting Type
- Surface Mount
- Package / Case
- PowerPAK® SO-8
- Supplier Device Package
- PowerPAK® SO-8
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