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SIS410DN-T1-GE3

Description:
MOSFET N-CH D-S 20V PPAK 1212-8
Manufacturer:
Vishay Siliconix
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SIS410DN-T1-GE3

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
22A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs
4.8 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) @ Vgs
41nC @ 10V
Input Capacitance (Ciss) @ Vds
1600pF @ 10V
Power - Max
52W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8
Supplier Device Package
PowerPAK® 1212-8

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