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SUD35N10-26P-GE3

Description:
MOSFET N-CH D-S 100V DPAK
Manufacturer:
Vishay Siliconix
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SUD35N10-26P-GE3

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
35A (Tc)
Rds On (Max) @ Id, Vgs
26 mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
4.4V @ 250µA
Gate Charge (Qg) @ Vgs
47nC @ 10V
Input Capacitance (Ciss) @ Vds
2000pF @ 12V
Power - Max
83W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252, (D-Pak)

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