STD1NK60-1
- Description：
- MOSFET N-CH 600V 1A IPAK
- Manufacturer：
- STMicroelectronics
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Product Information
- Category
- FETs - Single
- Packaging
- Tube
- Series
- SuperMESH™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 600V
- Current - Continuous Drain (Id) @ 25°C
- 1A (Tc)
- Rds On (Max) @ Id, Vgs
- 8.5 Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id
- 3.7V @ 250µA
- Gate Charge (Qg) @ Vgs
- 10nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 156pF @ 25V
- Power - Max
- 30W
- Mounting Type
- Through Hole
- Package / Case
- TO-251-3 Long Leads, IPak, TO-251AB
- Supplier Device Package
- I-Pak
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