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BSO612CV G
BSO612CV G
Description:
MOSFET N/P-CH 60V 2A 8-SOIC
Manufacturer:
Infineon Technologies
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BSO612CV G
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BSO612CV G
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Product Information
Category
FETs - Arrays
Packaging
Tape & Reel (TR)
Series
SIPMOS®
FET Type
N and P-Channel
FET Feature
Standard
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
3A, 2A
Rds On (Max) @ Id, Vgs
120 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
4V @ 20µA
Gate Charge (Qg) @ Vgs
15.5nC @ 10V
Input Capacitance (Ciss) @ Vds
340pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
PG-DSO-8
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