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FDMC2610

Description:
MOSFET N-CH 200V 2.2A POWER33-8
Manufacturer:
Fairchild Semiconductor
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FDMC2610

Product Information

Category
FETs - Single
Packaging
Cut Tape (CT)
Series
UniFET™
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
2.2A (Ta), 9.5A (Tc)
Rds On (Max) @ Id, Vgs
200 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) @ Vgs
18nC @ 10V
Input Capacitance (Ciss) @ Vds
960pF @ 100V
Power - Max
2.1W
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Supplier Device Package
8-Power33 (3x3)

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