IPG20N06S2L-65
- Description：
- MOSFET 2N-CH 55V 20A TDSON-8-4
- Manufacturer：
- Infineon Technologies
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Product Information
- Category
- FETs - Arrays
- Packaging
- Tape & Reel (TR)
- Series
- OptiMOS™
- FET Type
- 2 N-Channel (Dual)
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 55V
- Current - Continuous Drain (Id) @ 25°C
- 20A
- Rds On (Max) @ Id, Vgs
- 65 mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id
- 2V @ 14µA
- Gate Charge (Qg) @ Vgs
- 12nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 410pF @ 25V
- Power - Max
- 43W
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Supplier Device Package
- PG-TDSON-8-4 (5.15x6.15)
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