ALD1110EPAL
- Description：
- MOSFET N-CH ADJ DUAL 8DIP
- Manufacturer：
- Advanced Linear Devices Inc
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Product Information
- Category
- FETs - Arrays
- Packaging
- Tube
- Series
- EPAD®
- FET Type
- 2 N-Channel (Dual) Matched Pair
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 10V
- Current - Continuous Drain (Id) @ 25°C
- 3mA
- Rds On (Max) @ Id, Vgs
- 500 Ohm @ 5V
- Vgs(th) (Max) @ Id
- 1.01V @ 1µA
- Gate Charge (Qg) @ Vgs
- -
- Input Capacitance (Ciss) @ Vds
- 2.5pF @ 5V
- Power - Max
- 600mW
- Mounting Type
- Through Hole
- Package / Case
- 8-DIP (0.300", 7.62mm)
- Supplier Device Package
- 8-PDIP
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