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HTMN5130SSD-13

Description:
FET N-CH 55V 2.6A 8-SOIC
Manufacturer:
Diodes Incorporated
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HTMN5130SSD-13

Product Information

Category
FETs - Arrays
Packaging
Tape & Reel (TR)
Series
-
FET Type
2 P-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
55V
Current - Continuous Drain (Id) @ 25°C
2.6A
Rds On (Max) @ Id, Vgs
200 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) @ Vgs
8.9nC @ 10V
Input Capacitance (Ciss) @ Vds
218.7pF @ 25V
Power - Max
1.7W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO

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