PHKD3NQ10T,518
- Description：
- MOSFET 2N-CH 100V 3A 8SOIC
- Manufacturer：
- NXP Semiconductors
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Product Information
- Category
- FETs - Arrays
- Packaging
- Tape & Reel (TR)
- Series
- TrenchMOS™
- FET Type
- 2 N-Channel (Dual)
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 100V
- Current - Continuous Drain (Id) @ 25°C
- 3A
- Rds On (Max) @ Id, Vgs
- 90 mOhm @ 1.5A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Gate Charge (Qg) @ Vgs
- 21nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 633pF @ 20V
- Power - Max
- 2W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package
- 8-SO
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