BSC12DN20NS3 G
- Description：
- MOSFET N-CH 200V 11.3A 8TDSON
- Manufacturer：
- Infineon Technologies
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- OptiMOS™
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Drain to Source Voltage (Vdss)
- 200V
- Current - Continuous Drain (Id) @ 25°C
- 11.3A (Tc)
- Rds On (Max) @ Id, Vgs
- 125 mOhm @ 5.7A, 10V
- Vgs(th) (Max) @ Id
- 4V @ 25µA
- Gate Charge (Qg) @ Vgs
- 8.7nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 680pF @ 100V
- Power - Max
- 50W
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Supplier Device Package
- PG-TDSON-8 (5.15x6.15)
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