ALD212900APAL
- Description：
- MOSFET N CH 10.6V 79A 8DIP
- Manufacturer：
- Advanced Linear Devices Inc
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Product Information
- Category
- FETs - Arrays
- Packaging
- Tube
- Series
- EPAD®, Zero Threshold™
- FET Type
- 2 N-Channel (Dual) Matched Pair
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 10.6V
- Current - Continuous Drain (Id) @ 25°C
- 79mA, 85µA
- Rds On (Max) @ Id, Vgs
- 14 Ohm
- Vgs(th) (Max) @ Id
- 10mV @ 20µA
- Gate Charge (Qg) @ Vgs
- -
- Input Capacitance (Ciss) @ Vds
- 30pF @ 5V
- Power - Max
- 500mW
- Mounting Type
- Through Hole
- Package / Case
- 8-DIP (0.300", 7.62mm)
- Supplier Device Package
- 8-PDIP
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