PMDPB65UP,115
- Description：
- MOSFET P-CH 20V DUAL SOT1118
- Manufacturer：
- NXP Semiconductors
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Product Information
- Category
- FETs - Arrays
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- 2 P-Channel (Dual)
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 3.5A
- Rds On (Max) @ Id, Vgs
- 70 mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Gate Charge (Qg) @ Vgs
- 6nC @ 4.5V
- Input Capacitance (Ciss) @ Vds
- 380pF @ 10V
- Power - Max
- 520mW
- Mounting Type
- Surface Mount
- Package / Case
- 6-UDFN Exposed Pad
- Supplier Device Package
- 6-HUSON (2X2)
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