SSM3K106TU(TE85L)
- Description：
- MOSFET N-CH SGL 20V 1.2A UFM
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate, 4V Drive
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 1.2A (Ta)
- Rds On (Max) @ Id, Vgs
- 310 mOhm @ 600mA, 10V
- Vgs(th) (Max) @ Id
- 2.3V @ 100µA
- Gate Charge (Qg) @ Vgs
- -
- Input Capacitance (Ciss) @ Vds
- 36pF @ 10V
- Power - Max
- 500mW
- Mounting Type
- Surface Mount
- Package / Case
- 3-SMD, Flat Leads
- Supplier Device Package
- UFM
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