SI2333DS-T1-E3
- Description：
- MOSFET P-CH 12V 4.1A SOT23-3
- Manufacturer：
- Vishay Siliconix
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- TrenchFET®
- FET Type
- MOSFET P-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 12V
- Current - Continuous Drain (Id) @ 25°C
- 4.1A (Ta)
- Rds On (Max) @ Id, Vgs
- 32 mOhm @ 5.3A, 4.5V
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Gate Charge (Qg) @ Vgs
- 18nC @ 4.5V
- Input Capacitance (Ciss) @ Vds
- 1100pF @ 6V
- Power - Max
- 750mW
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package
- SOT-23-3 (TO-236)
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