CSD86311W1723
- Description：
- MOSFET 2N-CH 25V 4.5A 12DSBGA
- Manufacturer：
- Texas Instruments
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Product Information
- Category
- FETs - Arrays
- Packaging
- Cut Tape (CT)
- Series
- NexFET™
- FET Type
- 2 N-Channel (Dual)
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 25V
- Current - Continuous Drain (Id) @ 25°C
- 4.5A
- Rds On (Max) @ Id, Vgs
- 39 mOhm @ 2A, 8V
- Vgs(th) (Max) @ Id
- 1.4V @ 250µA
- Gate Charge (Qg) @ Vgs
- 4nC @ 4.5V
- Input Capacitance (Ciss) @ Vds
- 585pF @ 12.5V
- Power - Max
- 1.5W
- Mounting Type
- Surface Mount
- Package / Case
- 12-UFBGA, DSBGA
- Supplier Device Package
- 12-DSBGA (1.53x1.98)
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