SSM6N58NU,LF
- Description：
- MOSF DL N CH 30V 4A UDFN6
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- FETs - Arrays
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- 2 N-Channel (Dual)
- FET Feature
- Logic Level Gate, 1.8V Drive
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 4A
- Rds On (Max) @ Id, Vgs
- 84 mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id
- 1V @ 1mA
- Gate Charge (Qg) @ Vgs
- 1.8nC @ 4.5V
- Input Capacitance (Ciss) @ Vds
- 129pF @ 15V
- Power - Max
- 1W
- Mounting Type
- Surface Mount
- Package / Case
- 6-WDFN Exposed Pad
- Supplier Device Package
- 6-uDFN (2x2)
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