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SI4210DY-T1-GE3

Description:
MOSFET N-CH D-S 30V 8-SOIC
Manufacturer:
Vishay Siliconix
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SI4210DY-T1-GE3

Product Information

Category
FETs - Arrays
Packaging
Cut Tape (CT)
Series
TrenchFET®
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
6.5A
Rds On (Max) @ Id, Vgs
35.5 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) @ Vgs
12nC @ 10V
Input Capacitance (Ciss) @ Vds
445pF @ 15V
Power - Max
2.7W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC N

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