DMN2500UFB4-7
- Description：
- MOSFET N-CH 20V 810A 3DFN
- Manufacturer：
- Diodes Incorporated
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Product Information
- Category
- FETs - Single
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 810mA (Ta)
- Rds On (Max) @ Id, Vgs
- 400 mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Gate Charge (Qg) @ Vgs
- 0.74nC @ 4.5V
- Input Capacitance (Ciss) @ Vds
- 60.67pF @ 16V
- Power - Max
- 460mW
- Mounting Type
- Surface Mount
- Package / Case
- 3-XFDFN
- Supplier Device Package
- 3-X2-DFN1006
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