BSO211P
- Description：
- MOSFET DUAL P-CH 20V 4.7A 8-SOIC
- Manufacturer：
- Infineon Technologies
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Product Information
- Category
- FETs - Arrays
- Packaging
- Cut Tape (CT)
- Series
- OptiMOS™
- FET Type
- 2 P-Channel (Dual)
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 4.7A
- Rds On (Max) @ Id, Vgs
- 67 mOhm @ 4.7A, 4.5V
- Vgs(th) (Max) @ Id
- 1.2V @ 25µA
- Gate Charge (Qg) @ Vgs
- 23.9nC @ 4.5V
- Input Capacitance (Ciss) @ Vds
- 920pF @ 15V
- Power - Max
- 2W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package
- P-DSO-8
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