PMGD780SN,115
- Description：
- MOSFET N-CH TRENCH DL 60V 6TSSOP
- Manufacturer：
- NXP Semiconductors
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Product Information
- Category
- FETs - Arrays
- Packaging
- Cut Tape (CT)
- Series
- TrenchMOS™
- FET Type
- 2 N-Channel (Dual)
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 60V
- Current - Continuous Drain (Id) @ 25°C
- 490mA
- Rds On (Max) @ Id, Vgs
- 920 mOhm @ 300mA, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Gate Charge (Qg) @ Vgs
- 1.05nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 23pF @ 30V
- Power - Max
- 410mW
- Mounting Type
- Surface Mount
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Supplier Device Package
- 6-TSSOP
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