SSM6L13TU(T5L,F,T)
- Description：
- MOSF N/P CH 20V 800MA CH UF6
- Manufacturer：
- Toshiba Semiconductor and Storage
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Product Information
- Category
- FETs - Arrays
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- N and P-Channel
- FET Feature
- Logic Level Gate, 1.8V Drive
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 800mA
- Rds On (Max) @ Id, Vgs
- 143 mOhm @ 600MA, 4V
- Vgs(th) (Max) @ Id
- 1V @ 1mA
- Gate Charge (Qg) @ Vgs
- -
- Input Capacitance (Ciss) @ Vds
- 268pF @ 10V
- Power - Max
- 500mW
- Mounting Type
- Surface Mount
- Package / Case
- 6-SMD, Flat Leads
- Supplier Device Package
- UF6
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