SIZ910DT-T1-GE3
- Description：
- MOSFET N-CH 30V DUAL D-S
- Manufacturer：
- Vishay Siliconix
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Product Information
- Category
- FETs - Arrays
- Packaging
- Tape & Reel (TR)
- Series
- TrenchFET®
- FET Type
- 2 N-Channel (Dual) Asymmetrical
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 22A, 32A
- Rds On (Max) @ Id, Vgs
- 5.8 mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id
- 2.2V @ 250µA
- Gate Charge (Qg) @ Vgs
- 40nC @ 10V
- Input Capacitance (Ciss) @ Vds
- 1500pF @ 15V
- Power - Max
- 4.6W, 5.2W
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerWDFN
- Supplier Device Package
- 8-PowerPair®
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