CSD85312Q3E
- Description：
- MOSFET 2N-CH 20V 39A 8VSON
- Manufacturer：
- Texas Instruments
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Product Information
- Category
- FETs - Arrays
- Packaging
- Cut Tape (CT)
- Series
- NexFET™
- FET Type
- 2 N-Channel (Dual) Common Source
- FET Feature
- Logic Level Gate, 5V Drive
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 39A
- Rds On (Max) @ Id, Vgs
- 12.4 mOhm @ 10A, 8V
- Vgs(th) (Max) @ Id
- 1.4V @ 250µA
- Gate Charge (Qg) @ Vgs
- 15.2nC @ 4.5V
- Input Capacitance (Ciss) @ Vds
- 2390pF @ 10V
- Power - Max
- 2.5W
- Mounting Type
- Surface Mount
- Package / Case
- 8-VDFN Exposed Pad
- Supplier Device Package
- 8-SON (3.3x3.3)
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