SH8M4TB1
- Description：
- MOSFET N+P 30V 9A/7A 8-SOIC
- Manufacturer：
- Rohm Semiconductor
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Product Information
- Category
- FETs - Arrays
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- N and P-Channel
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 9A, 7A
- Rds On (Max) @ Id, Vgs
- 18 mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Gate Charge (Qg) @ Vgs
- 15nC @ 5V
- Input Capacitance (Ciss) @ Vds
- 1190pF @ 10V
- Power - Max
- 2W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package
- 8-SOIC N
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