PMDPB30XN,115
- Description：
- MOSFET 2N-CH 20V 4A 6HUSON
- Manufacturer：
- NXP Semiconductors
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Product Information
- Category
- FETs - Arrays
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- 2 N-Channel (Dual)
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 4A
- Rds On (Max) @ Id, Vgs
- 40 mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id
- 900mV @ 250µA
- Gate Charge (Qg) @ Vgs
- 21.7nC @ 4.5V
- Input Capacitance (Ciss) @ Vds
- 660pF @ 10V
- Power - Max
- 490mW
- Mounting Type
- Surface Mount
- Package / Case
- 6-UDFN Exposed Pad
- Supplier Device Package
- 6-HUSON (2X2)
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