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US6M11TR
US6M11TR
Description:
MOSFET N/P-CH 20V 1.5A TUMT6
Manufacturer:
Rohm Semiconductor
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US6M11TR
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US6M11TR
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Product Information
Category
FETs - Arrays
Packaging
Cut Tape (CT)
Series
-
FET Type
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V, 12V
Current - Continuous Drain (Id) @ 25°C
1.5A, 1.3A
Rds On (Max) @ Id, Vgs
180 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id
1V @ 1mA
Gate Charge (Qg) @ Vgs
1.8nC @ 4.5V
Input Capacitance (Ciss) @ Vds
110pF @ 10V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
UMT6
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