QS8M12TCR
- Description：
- MOSFET N/P-CH 30V 4A TSMT8
- Manufacturer：
- Rohm Semiconductor
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Product Information
- Category
- FETs - Arrays
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- N and P-Channel
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 30V
- Current - Continuous Drain (Id) @ 25°C
- 4A
- Rds On (Max) @ Id, Vgs
- 42 mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Gate Charge (Qg) @ Vgs
- 3.4nC @ 5V
- Input Capacitance (Ciss) @ Vds
- 250pF @ 10V
- Power - Max
- 1.5W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SMD, Flat Lead
- Supplier Device Package
- TSMT8
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