NTHC5513T1G
- Description：
- MOSF N/P-CH 20V 2.9A/2.2A 1206A
- Manufacturer：
- ON Semiconductor
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Product Information
- Category
- FETs - Arrays
- Packaging
- Cut Tape (CT)
- Series
- -
- FET Type
- N and P-Channel
- FET Feature
- Logic Level Gate
- Drain to Source Voltage (Vdss)
- 20V
- Current - Continuous Drain (Id) @ 25°C
- 2.9A, 2.2A
- Rds On (Max) @ Id, Vgs
- 80 mOhm @ 2.9A, 4.5V
- Vgs(th) (Max) @ Id
- 1.2V @ 250µA
- Gate Charge (Qg) @ Vgs
- 4nC @ 4.5V
- Input Capacitance (Ciss) @ Vds
- 180pF @ 10V
- Power - Max
- 1.1W
- Mounting Type
- Surface Mount
- Package / Case
- 8-SMD, Flat Lead
- Supplier Device Package
- ChipFET™
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